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DESCRIPTION
< High-power GaAs FET (small signal gain stage) >
MGF0905A
L & S BAND / 2.5W
non - matched
DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky
gate, is designed for use L & S band amplifiers.
FEATURES
High output power
Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
High power gain
Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
High power added efficiency
P.A.E=40%(TYP.) @f=1.65GHz,Pin=26dBm
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https://pdf1.alldatasheet.jp/datasheet-pdf/view/425615/MITSUBISHI/MGF0905A.html
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