高周波増幅用 パワー Mos-FET NE5510279A 在庫限りの販売です
FEATURES
• HIGH OUTPUT POWER:
32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 25 dBm
• HIGH POWER ADDED EFFICIENCY:
45% TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 25 dBm
• HIGH LINEAR GAIN:
10 dB TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 10 dBm
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
2.8 to 6.0 V
パワーアンプ、修理、保守用に。在庫限り、長期保管品
詳しくは下記のホームページをご覧下さい。
https://www.flqelettronica.it/public/userfiles/ne5510279a_datasheet.pdf