高周波増幅用 MosFET 在庫限りの販売です
FEATURES
• High output power : Pout = 26.0 dBm TYP. (VDS = 3.0 V, IDset = 200 mA, f = 2.45 GHz, Pin = 19 dBm)
• High power added efficiency : ηadd = 45% TYP. (VDS = 3.0 V, IDset = 200 mA, f = 2.45 GHz, Pin = 19 dBm)
• High linear gain : GL = 11 dB TYP. (VDS = 3.0 V, IDset = 200 mA, f = 2.45 GHz, Pin = 10 dBm)
• Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
• Single supply : VDS = 2.8 to 3.8 V
弊社、パワーアンプに採用、修理、保守用に。
詳しくは下記のホームページをご覧下さい。
https://www.renesas.com/jp/ja/doc/YOUSYS/document/003/PU10124EJ03V0DS.pdf