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1.2GHz¹â½ÐÎϥѥ¥â¥¸¥å¡¼¥ë RA18H1213G

RA18H1213G

8,600±ß(Àǹþ9,460±ß)

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FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD@0 @ VDD=12.5V, VGG=0V)
• Pout>18W, hT>20% @ VDD=12.5V, VGG=5V, Pin=200mW
• Broadband Frequency Range: 1.24-1.30GHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power

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http://www.mitsubishielectric.co.jp/semiconductors/content/product/highfrequency/siliconrf/module/ra18h1213g.pdf

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